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Dry etching

Ion Beam & Plasma Etching

Dry etching techniques (RIE, ion beam and plasma etching) are intensively used at microfab for patterning of dielectrics, polysilicon and metal layers. Further important applications are the photoresist stripping and the anisotropic deep silicon trench etching (Deep Reactive Ion Etching - DRIE).

State-of-the-art monochromatic end point detection is applied with most RIE processes, ensuring a minimum of substrate loss due to overetching. Various etch masks (photoresist, SiO2, Ti, Cr, plasmanitride) can be combined, depending on the materials to be etched.

All processes were optimized regarding troughput, etch rate selectivity toward mask and substrate, CD loss (undercut), and etch profile (taper).

At the present time, microfab operates ten dry etching systems of which there are five RIE systems (STS multiplex, Alcatel 601E and AMS200) for dielectrics and metal etch and for deep silicon trench etching, one physical ion beam etcher (STS 340 PC) for noble metal etch, and four plasma etchers for resist strip processes (two Tepla barrel type etchers).

Standard RIE Processes

There are several standard processes available:

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