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Deep Trenches

Deep Reactive Ion Etching - DRIE



DRIE is a high aspect ratio, deep trench silicon etching process (Bosch process). The principle of the deep trench silicon etching process is an alternating fluorine based etching and passivation of the structures. This results in sidewall profiles of 90°±1° with aspect ratios of up to 40:1. Masking layers can be made of photo resist or silicon oxide.

There are currently four Alcatel 601E/AMS200 systems and one STS/ICP system installed, which brings the total number of production tools to five.

Main Benefits of DRIE

Alcatel AMS200 & 601E

Alcatel's deep plasma etch technology is designed to deliver superior process performance and maximum process flexibility to meet the needs of a broad range of deep silicon etch applications.

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